Dawon Kahng, Date of Birth, Place of Birth, Date of Death

Dawon Kahng

South Korean engineer

Date of Birth: 04-May-1931

Place of Birth: Seoul, South Korea

Date of Death: 13-May-1992

Profession: engineer

Nationality: South Korea

Zodiac Sign: Taurus

Dawon Kahng (May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics.
He is best known for inventing the MOSFET (metal-oxide-semiconductor field-effect transistor), also known as the MOS transistor, with Mohamed Atalla in 1959.
Atalla and Kahng developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication.
The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment. Atalla and Kahng later proposed the concept of the MOS integrated circuit, and they did pioneering work on Schottky diodes and manolayer-base transistors in the early 1960s.
Kahng then invented the floating-gate MOSFET (FGMOS) with Simon Sze in 1967.
Kahng and Sze proposed that FGMOS could be used as floating-gate memory cells for non-volatile memory (NVM) and reprogrammable read-only memory (ROM), which became the basis for EPROM (erasable programmable ROM), EEPROM (electrically erasable programmable ROM) and flash memory technologies.
Kahng was inducted into the National Inventors Hall of Fame in 2009.